Measuring and testing – Specimen stress or strain – or testing by stress or strain... – Specified electrical sensor or system
Reexamination Certificate
2004-12-14
2008-10-14
Noori, Max (Department: 2855)
Measuring and testing
Specimen stress or strain, or testing by stress or strain...
Specified electrical sensor or system
Reexamination Certificate
active
07434476
ABSTRACT:
Thin metallic films are used as the piezoresistive self-sensing element in microelectromechanical and nanoelectromechanical systems. The specific application to AFM probes is demonstrated.
REFERENCES:
patent: 3034345 (1962-05-01), Mason
patent: 4798206 (1989-01-01), Maddison et al.
patent: 5266801 (1993-11-01), Elings et al.
patent: 5345816 (1994-09-01), Clabes et al.
patent: 5475318 (1995-12-01), Marcus et al.
patent: 5559330 (1996-09-01), Murashita
patent: 5666190 (1997-09-01), Quate et al.
patent: 5672816 (1997-09-01), Park et al.
patent: 5831181 (1998-11-01), Majumdar et al.
patent: 5856672 (1999-01-01), Ried
patent: 5939623 (1999-08-01), Muramatsu et al.
patent: 6000947 (1999-12-01), Minne et al.
patent: 6006606 (1999-12-01), Shinogi et al.
patent: 6075585 (2000-06-01), Minne et al.
patent: 6185991 (2001-02-01), Hong et al.
patent: 6784074 (2004-08-01), Shchukin et al.
patent: 6823717 (2004-11-01), Porter et al.
patent: 6851301 (2005-02-01), Kim et al.
patent: 6882051 (2005-04-01), Majumdar et al.
patent: 6887365 (2005-05-01), Naughton
patent: 6945099 (2005-09-01), Su et al.
patent: 7041963 (2006-05-01), El Rifai et al.
patent: 7302856 (2007-12-01), Tang
patent: 2002/0166962 (2002-11-01), Roukes et al.
patent: 2002/0174715 (2002-11-01), Takahashi et al.
patent: 2002/0178801 (2002-12-01), Takahashi et al.
patent: 2003/0062193 (2003-04-01), Thaysen et al.
patent: 2003/0089182 (2003-05-01), Thaysen et al.
patent: 2003/0135971 (2003-07-01), Liberman et al.
patent: 2003/0142597 (2003-07-01), Park et al.
patent: 2004/0105560 (2004-06-01), Naniki
patent: 2005/0034529 (2005-02-01), Tang et al.
patent: 2005/0109925 (2005-05-01), El Rifai et al.
patent: 2005/0212529 (2005-09-01), Huang et al.
patent: 2005/0214803 (2005-09-01), Wang
patent: 2005/0236357 (2005-10-01), Bakkers et al.
patent: 2005/0244326 (2005-11-01), Colbert et al.
patent: 2005/0275502 (2005-12-01), Goebel et al.
patent: WO 03/095616 (2003-11-01), None
Harley et al., “High-Sensitivity Piezoresistive Cantilevers Under 1000 A Thick,” Applied Physics Letters, vol. 75, No. 2, American Institute of Physics, Jul. 12, 1999, pp. 289-291.
Harley et al., “1/F Noise Consideration for The Design and Process Optimization of Piezoresistive Cantilevers,” Journal of Microelectromechanical Systems, vol. 9, No. 2, IEEE, Jun. 2, 2000, pp. 226-235.
Hutter et al., “Calibration of Atomic-Force Microscope Tips,” Rev. Sci. Instrum., vol. 64, No. 7, American Institute of Physics, Jul. 1993, pp. 1868-1873.
Kuczynski, “Effect of Elastic Strain on The Electrical Resistance of Metals,” Physical Review, vol. 94, No. 1, Apr. 1, 1954, pp. 61-64.
Li et al., “Thin Gold Film Strain Gauges,” J. Vac. Sci. Technol., vol. 12, No. 3, American Vacuum Society, May 1994, pp. 813-819.
Parker et al., “Electrical Resistance-Strain Characteristics of Thin Evaporated Metal Films,” Journal of Applied Physics, vol. 34, No. 9, Sep. 1963, pp. 2700-2708.
Physics Web, “Nanoelectromechanical Systems Face The Future,” Physics World Magazine, vol. 14, Issue 2, Feb. 2001, http://physicsweb.org/article/world/14/2/8.
Reid et al., “6-MHz 2-N/m Piezoresistive Atomic-Force-Microscope Cantilevers With Incisive Tips,” Journal of Microelectromechanical Systems, vol. 6, No. 4, IEEE, Dec. 4, 1997, pp. 294-302.
Thaysen et al., “Polymer-Based Stress Sensor With Integrated Readout,” Journal of Physics D: Applied Physics, vol. 35, Institute of Physics Publishing Ltd., 2002, pp. 2698-2703.
Tortonese et al., “Atomic Resolution With An Atomic Force Microscope Using Piezoresistive Detection,” Applied Physics Letters, vol. 62, No. 8, American Institute of Physics, Feb. 22, 1993, pp. 834-836.
Yang et al., “Monocrystalline Silicon Carbide Nanoelectromechanical Systems,” Applied Physics Letters, vol. 78, No. 2, American Institute of Physics, Jan. 8, 2001, pp. 162-164.
Melosh et al., “Ultrahigh-Density Nanowire Lattices and Circuits,” Science, Apr. 4, 2003, vol. 300, pp. 112-115.
Hrovat et al., “A characterisation of thick film resistors for strain gauge applications,” J. Mater. Sci., 2001, vol. 36, pp. 2679-2689.
Knight et al., “Effect of Structure on the Piezoresistive Properties of Thin Metal Films,” J. Vac. Sci. Technol., 6, 706-710, 1969.
Chung et al., “Micromachined metal thin-film pressure sensor suitable for batch process,” Electronics Letters, Oct. 24, 2002, vol. 38, No. 22, 1344-1346.
Pattabi et al., “A simple strain cell for the measurement of gauge factor of a thin film,” Rev. Sci. Inst., Apr. 1999, vol. 70, No. 4, pp. 2074-2075.
Bishay et al., “Applicability of discontinuous palladium films as strain gauges,” J. Mater. Sci., 1992, vol. 3, pp. 195-199.
Jen et al., “Piezoresistance characteristics of some magnetic and non-magnetic metal films,” J. Magn. Magn. Mater., 2003, vol. 256, pp. 54-62.
Mcguire et al., “Anisotropic Magnetoresistance in Ferromagnetic 3d Alloys,” IEEE Trans. Mag-11, Jul. 4, 1975, No. 4, pp. 1018-1038.
Rajanna et al., “Pressure transducer with Au—Ni thin-film strain gauges,” IEEE Trans. Electron Devices, Mar. 1993, vol. 40, No. 3, pp. 521-524.
Sampath et al., “Behaviour of Bi—Sb alloy thin-film strain gauges,” Thin-Solid Films, 1986, 137, pp. 199-205.
Chiriac et al., “Ni—Ag thin films as strain-sensitive materials for peizoresistive sensors,” Sensors and Actuators A, 1999, vol. 76, pp. 376-380.
Lei et al., “Thin film thermocouples and strain gauge technologies for engine applications,” Sensors and Actuators A, 1998, vol. 65, pp. 187-193.
Guckel et al., “Surface micromachined pressure transducers,” Sensors and Actuators A, 1991, vol. 28 (2), pp. 133-146.
Patridge et al., “High-performance planar peizoresistive accelerometer,” JMEMS, Mar. 1, 2000, vol. 9, No. 1, pp. 58-66.
Chui et al., “Independent detection of vertical and lateral forces with a sidewall-implanted dual-axis piezoresistive cantilever,” Appl. Phys. Lett., Mar. 16, 1998, vol. 72, No. 11, pp. 1388-1390.
Dehe et al., “A piezoresistive GaAs pressure sensor with GaAs/AlGaAs membrane technology,” J. Micromech. Microeng., 1995, vol. 5, pp. 139-142.
Hsu et al., “Piezoresistive response induced by piezoelectric charges in n-type GaAs mesa resistors for application in stress transducers,” J. Appl. Phys. Jan. 1, 1999, vol. 85, No. 1, pp. 333-340.
Tang et al., “Two-dimensional electron-gas actuation and transduction for GaAs nanoelectromechanical systems,” Appl. Phys. Lett. Nov. 11, 2002, vol. 81, No. 20, pp. 3879-3881.
Konczewicz et al., “GaAlAs-Based Micromachined Accelerometer,” Phys. Stat. Sol. B, 2001, vol. 223, pp. 593-596.
Bykhovski et al., “Piezoresistive effect in wirtzite n-type GaN,” Appl. Phys. Lett. Feb. 5, 1996, vol. 68, No. 6, pp. 818-819.
Gaska et al., Piezoresistive effect in GaN—AlN—GaN structures,: Appl. Phys. Lett., Dec. 29, 1997, vol. 71, No. 26, pp. 3817-3819.
Gaska et al., “Piezoresistive effect in AlN/GaN short range superlattice structures,” J. Appl. Phys. May 1, 1999, vol. 85, No. 9, pp. 6932-6934.
Mosser et al., “Energy shifts due to the local environment of DX centers in AlxGa1-xAs:Si,” Mater. Sci. Forum, 1994, vols. 143/147, pp. 1117-1122.
Eickhoff et al., “Piezoresistivity of AlxGa1-xN/GaN heterostructures,” J. Appl. Phys. October 1, 2001, vol. 90, No. 7, pp. 3383-3386.
Van Vessem et al., “Rediscovering the Strain Gauge Pressure Sensor,” Sensors online, vol. 16, No. 4, 6 pgs, Apr. 1999.
Li Mo
Roukes Michael L.
Tang Hongxing
Califronia Institute of Technology
Foley & Lardner LLP
Noori Max
LandOfFree
Metallic thin film piezoresistive transduction in... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metallic thin film piezoresistive transduction in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metallic thin film piezoresistive transduction in... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3990978