Metalization system having an enhanced thermal conductivity

Details Metalization system having an enhanced thermal conductivity Metalization system having an enhanced thermal conductivity

1997-09-26

2000-04-04

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257700, 257632, 257633, 257508, H01L 2348, H01L 2352, H01L 2940, H01L 2900

Patent

active

060465034

ABSTRACT:
A multi-level integrated circuit metalization system having a composite dielectric layer comprising a layer 22 of diamond or sapphire. A plurality of patterned metalization layers is disposed over a semiconductor substrate 10. A composite dielectric layer is disposed between a pair of the metalization layers. The composite dielectric layer 22 comprises a layer of diamond or sapphire. The diamond or sapphire layer has disposed on a surface thereof one of the patterned metalization layers. A conductive via 34 passes through the composite layer. One end of the conductive via is in contact with diamond or sapphire layer. The diamond or sapphire layer conducts heat laterally along from the metalization layer disposed thereon to a heat sink provided by the conductive via. The patterned diamond or sapphire layer provides a mask during the second metalization deposition. Thus, the leads of the next metalization layer will be deposited directly on the diamond or sapphire layer which will serve as an etch stop during the metal etching process.

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CRC Handbook of Chemistry and Physics, 77th Edition, David R. Lide, pp. 12-177, 178, 1996.

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