Metalization structure and manufacturing method thereof

Etching a substrate: processes – Forming or treating electrical conductor article – Forming or treating of groove or through hole

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216 20, 428209, B44C 122

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active

058689494

ABSTRACT:
A metalization structure having a first conductor layer on the surface of an underlying layer and, further, a second conductor layer connected conductively with the first conductor layer in which a polyimide insulative film of low thermal expansion coefficient is present between at least an end of a pattern of the second conductor layer and the first conductor layer, for stably obtaining a metalization structure of high reliability and free from the worry of peeling of the conductor portion from a substrate or occurrence of cracking to the underlying layer.

REFERENCES:
patent: 5118385 (1992-06-01), Kumar et al.
patent: 5209817 (1993-05-01), Ahmad et al.

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