Semiconductor device manufacturing: process – Forming schottky junction
Reexamination Certificate
2007-09-18
2007-09-18
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Forming schottky junction
C438S104000, C438S238000, C438S381000, C257SE21170, C257SE21200, C257SE21091
Reexamination Certificate
active
11216398
ABSTRACT:
A method is provided for forming a metal/semiconductor/metal (MSM) current limiter and resistance memory cell with an MSM current limiter. The method includes the steps of: providing a substrate; forming an MSM bottom electrode overlying the substrate; forming a ZnOx semiconductor layer overlying the MSM bottom electrode, where x is in the range between about 1 and about 2, inclusive; and, forming an MSM top electrode overlying the semiconductor layer, The ZnOx semiconductor can be formed through a number of different processes such as spin-coating, direct current (DC) sputtering, radio frequency (RF) sputtering, metalorganic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).
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Evans David R.
Hsu Sheng Teng
Li Tingkai
Zhuang Wei-Wei
Law Office of Gerald Maliszewski
Maliszewski Gerald
Nhu David
Sharp Laboratories of America Inc.
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