Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-07-08
2008-07-08
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S752000, C438S622000, C438S626000, C438S653000
Reexamination Certificate
active
07397122
ABSTRACT:
A metal wiring for a semiconductor device and a method for forming the same are provided. The metal wiring includes a first insulating layer and a second insulating layer; an interlayer insulating film formed between the first and second insulating layers, wherein the interlayer insulating film is provided with holes having a designated shape; a barrier metal layer, a copper seed layer, and a copper layer sequentially formed in the holes of the interlayer insulating film; and a capping layer formed between the interlayer insulating film and the second insulating layer. The capping layer formed between the interlayer insulating film and the second insulating layer may be made of a negatively charged insulating material, thereby improving electro-migration characteristics at an interface between the capping layer and the copper layers.
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Dongbu Electronics Co. Ltd.
McKenna Long & Aldridge LLP
Picardat Kevin M
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