Metal wiring

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257753, M01L 2348

Patent

active

055023347

ABSTRACT:
A metal wiring is composed of an electroconductive adhesive layer formed on the inner wall of a contact hole provided in a dielectric film and on the surface of the above mentioned dielectric film, a first metal wiring arranged on the adhesive layer and filling the contact hole, and a second metal wiring which is made of a metal which is different from that of the first metal wiring and is formed on the above mentioned first metal wiring. The first metallic film formed on the above mentioned first metal wiring is formed by, for example, the blanket tungsten-CVD method.

REFERENCES:
patent: 4824802 (1989-04-01), Brown et al.
patent: 4824803 (1989-04-01), Us et al.
patent: 4933743 (1990-06-01), Thomas et al.
patent: 5202579 (1993-04-01), Fujii et al.
patent: 5278448 (1994-01-01), Fujii
patent: 5305519 (1994-04-01), Yamamoto et al.

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