Metal transistor device

Details Metal transistor device Metal transistor device

2004-01-22

2010-11-23

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S213000, C257S288000

Reexamination Certificate

active

07838875

ABSTRACT:
The present invention relates to a depletion or enhancement mode metal transistor in which the channel region of a transistor device comprises a thin film metal or metal composite layer formed over an insulating substrate.

REFERENCES:
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patent: 6365913 (2002-04-01), Misewich et al.
patent: 6458695 (2002-10-01), Lin et al.
patent: 6465315 (2002-10-01), Yu
patent: 6504174 (2003-01-01), Yamazaki et al.
patent: 6809379 (2004-10-01), Kreupl
patent: 2002/0045319 (2002-04-01), Ogura et al.
patent: 2003/0155591 (2003-08-01), Kreupl
patent: 2004/0149679 (2004-08-01), Song et al.
patent: 2004/0169227 (2004-09-01), Wei et al.
patent: 2004/0227154 (2004-11-01), Chu et al.

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