Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-07-17
1999-10-05
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 50, 257209, 438467, 438600, H01L 2900
Patent
active
059629100
ABSTRACT:
A metal-to-metal antifuse disposed between two aluminum metallization layers in a CMOS integrated circuit or similar structure includes an antifuse material layer having a substantially aluminum-free conductive link. The substantially aluminum-free link is formed by forming a first barrier metal layer out of TiN having a first thickness, a second barrier metal layer out of TiN having a second thickness which may be less than said first thickness, the first and second barrier metal layers separating the antifuse material layer from first and second electrodes. The antifuse is programmed by applying a voltage potential capable of programming the antifuse across the electrodes with the more positive side of the potential applied to the electrode adjacent the barrier metal layer having the least thickness. In another aspect of the invention, an antifuse having a first barrier metal layer of a first thickness and a second barrier metal layer of a second thickness may be fabricated wherein the first thickness is less than the second thickness and wherein programming of the antifuse is accomplished by placing the more positive voltage of the programming voltage supply on the electrode of the antifuse adjacent the first barrier metal layer.
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Eltoukhy Abdelshafy A.
Hawley Frank W.
McCollum John L.
Actel Corporation
Martin-Wallace Valencia
LandOfFree
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