Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1999-01-07
2000-11-21
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257306, H07L 2941
Patent
active
061507075
ABSTRACT:
The present invention provides a method for fabricating a capacitor within a semiconductor device comprising the steps of forming openings in an oxide dielectric to reach a lower conductor layer which will serve as a lower conductor plate of the capacitor; depositing capacitor electrode material, such as tungsten to fill the openings to form a capacitor electrode and planarizing the filled openings using chemical/mechanical polish; depositing a selected oxide capacitor dielectric over the capacitor electrodes and patterning the capacitor dielectric with photoresist to leave dielectric covering the area of the capacitor electrodes; stripping away the photoresist; adding an upper conductor layer on top of the capacitor dielectric to serve as the top plate of the capacitor. The above steps may be repeated to form multiple layers of capacitors within the semiconductor device.
REFERENCES:
patent: 4827323 (1989-05-01), Tigelaar et al.
patent: 5005102 (1991-04-01), Larson
patent: 5143861 (1992-09-01), Turner
patent: 5208726 (1993-05-01), Apel
patent: 5216572 (1993-06-01), Larson et al.
patent: 5281837 (1994-01-01), Kohyama
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5339212 (1994-08-01), Geffken et al.
patent: 5351163 (1994-09-01), Dawson et al.
patent: 5357132 (1994-10-01), Turner
patent: 5359217 (1994-10-01), Murai
patent: 5369296 (1994-11-01), Kato
patent: 5406447 (1995-04-01), Miyazaki
patent: 5416042 (1995-05-01), Beach et al.
patent: 5447882 (1995-09-01), Kim
patent: 5461536 (1995-10-01), Beach et al.
patent: 5478772 (1995-12-01), Fazan
patent: 5479316 (1995-12-01), Smrtic et al.
patent: 5563762 (1996-10-01), Leung et al.
patent: 5574621 (1996-11-01), Sakamoto et al.
patent: 5622893 (1997-04-01), Summerfelt et al.
patent: 5654567 (1997-08-01), Numata et al.
patent: 5708559 (1998-01-01), Brabazon et al.
patent: 5736448 (1998-04-01), Saia et al.
patent: 5827766 (1998-10-01), Lou
patent: 5904521 (1999-05-01), Jeng et al.
"High Dielectric Constant On-Chip Decoupling Capacitor Incorporated into BEOL Fabrication Process", IBM Technical Disclosure Bulletin, vol. 37, No. 10, Oct. 1994, pp. 413-414.
"High Capacitance Tungsten to Metal 1 Capacitor for High Frequency Applications", IBM Technical Disclosure Bullentin, vol. 38, No. 02, Feb. 1995, pp. 611-612.
Cook Robert K.
Gruszecki Craig R.
Passaro Mark A.
Scholl Frederick A.
Hardy David
International Business Machines - Corporation
Kotulak, Esq. Richard M.
LandOfFree
Metal-to-metal capacitor having thin insulator does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal-to-metal capacitor having thin insulator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal-to-metal capacitor having thin insulator will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1260044