Metal-to-metal antifuse with improved diffusion barrier layer

Details Metal-to-metal antifuse with improved diffusion barrier layer Metal-to-metal antifuse with improved diffusion barrier layer

1993-06-10

1996-04-23

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257528, 257529, 257530, H01L 2904, H01L 2900

Patent

active

055106463

ABSTRACT:
A metal-to-metal antifuse comprises a lower electrode comprising a first metal layer in an integrated circuit, a first barrier layer formed from a layer of TiW:N disposed over the lower electrode, a layer of antifuse material formed from amorphous silicon over the first barrier layer, a second barrier layer formed from a layer of TiW:N disposed over the layer of antifuse material, said second barrier layer, and an upper electrode over the second barrier layer, the upper electrode comprising a second metal layer in the integrated circuit.

REFERENCES:
patent: 4651409 (1987-03-01), Ellsworth et al.
patent: 4748490 (1988-05-01), Hollingsworth
patent: 4796075 (1989-01-01), Whitten
patent: 4822753 (1989-04-01), Pintchovski
patent: 4823181 (1989-04-01), Mohsen et al.
patent: 4847732 (1989-07-01), Stopper et al.
patent: 4870302 (1989-09-01), Freeman
patent: 4899205 (1990-02-01), Hardy et al.
patent: 4914055 (1990-04-01), Gordon et al.
patent: 4933576 (1990-06-01), Tamamura et al.
patent: 4943538 (1990-07-01), Mohsen et al.
patent: 5070384 (1991-12-01), McCollum et al.
patent: 5095362 (1992-03-01), Roesner
patent: 5100827 (1992-03-01), Lytle
patent: 5120679 (1992-06-01), Boardman et al.
patent: 5134457 (1992-07-01), Hardy et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5171715 (1992-12-01), Husher et al.
patent: 5173449 (1992-12-01), Lorenzen et al.
patent: 5194759 (1993-03-01), Ei-Ayat et al.
patent: 5196724 (1993-03-01), Gordon et al.
patent: 5233217 (1993-08-01), Dixit et al.
patent: 5266829 (1993-11-01), Hardy et al.
patent: 5272101 (1993-12-01), Forouhi et al.
patent: 5272666 (1993-12-01), Tsang et al.
patent: 5290734 (1994-03-01), Boardman et al.
patent: 5300456 (1994-04-01), Tigelaar et al.
patent: 5308795 (1994-05-01), Hawley et al.
patent: 5322812 (1994-06-01), Dixit et al.

Affiliated with

Also associated with

Rating

Metal-to-metal antifuse with improved diffusion barrier layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal-to-metal antifuse with improved diffusion barrier layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal-to-metal antifuse with improved diffusion barrier layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2310956