Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-08-01
1997-03-25
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 50, 257751, 257757, 257767, 257773, 257774, H01L 2900
Patent
active
056147562
ABSTRACT:
According to a first aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer under a plug of an electrically conductive material disposed between two metallization layers, According to a second aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer comprising a first nitride/first amorphous silicon/second nitride/second amorphous silicon sandwich under a plug of an electrically conductive material lined with titanium disposed between two metallization layers. In this aspect of the invention the titanium is allowed to react with the second amorphous silicon layer to form an electrically conductive silicide. This leaves the first nitride/first amorphous silicon/second nitride as the antifuse material layer while guaranteeing a strict control on the thickness of the antifuse material layer for assuring strict control over its respective breakdown or programming voltage. According to a third aspect of the present invention an antifuse structure capable of high density fabrication comprises an antifuse material layer disposed over a plug of an electrically conductive material disposed between two metallization layers.
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Forouhi Abdul R.
Hawley Frank W.
McCollum John L.
Yen Yeouchung
Actel Corporation
Fahmy Wael
Hardy David
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