Metal-to-metal antifuse structure

Details Metal-to-metal antifuse structure Metal-to-metal antifuse structure

1993-06-17

1994-04-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 52, 437170, 437192, 437922, 148DIG55, 257 50, 257530, H01L 2144

Patent

active

053004566

ABSTRACT:
A method of forming a metal-to-metal antifuse. An antifuse stack 32 is formed comprising a first metal layer 16, an antifuse dielectric layer, and an etchstop layer. The etchstop layer may, for example, comprise an oxide layer 24 and an amorphous silicon layer 28. An antifuse via 44 is etched through an interlevel dielectric layer 36 to the antifuse stack 32. Next, a portion of the etchstop layer at the bottom of via 44 is removed. Finally, a second layer of metal 48 is deposited to fill antifuse via 44 and etched to form the desired interconnections.

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patent: 5095362 (1992-03-01), Roesner
patent: 5100827 (1992-03-01), Lytle
patent: 5120679 (1992-06-01), Boardman et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5171715 (1992-12-01), Husher et al.
patent: 5181096 (1993-01-01), Forouhi
patent: 5196724 (1993-03-01), Gordon et al.
patent: 5233217 (1993-08-01), Dixit et al.

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