Metal-to-metal antifuse having improved barrier layer

Details Metal-to-metal antifuse having improved barrier layer Metal-to-metal antifuse having improved barrier layer

1998-08-13

2000-08-22

Chaudhuri, Olik

Semiconductor device manufacturing: process

Direct application of electrical current

To alter conductivity of fuse or antifuse element

438600, 257530, H01L 2900

Patent

active

06107165&

ABSTRACT:
A metal-to-metal conductive plug-type antifuise has a conductive plug disposed in an opening in an insulating layer. A programmable material feature (for example, amorphous silicon) overlies the conductive plug. A conductor involving a metal (for example, aluminum or copper) that migrates in the programmable material overlies the programmable material. To prevent migration of metal from the conductor into the programmable material when the antifuse is not programmed, the conductor has a layer of barrier metal between the metal that migrates and the programmable material. In some embodiments, there are two layers of barrier metal. An airbreak after formation of the first barrier metal layer improves the ability of the barrier metal to prevent diffusion between the programmable material and the overlying conductor. The airbreak may stuff grain boundaries in the upper surface of the first barrier metal and/or may cause the first barrier metal layer to have different grains and/or a different grain orientation than the overlaying second barrier metal layer. In some embodiments, a capping layer over the top surface of the programmable material protects the underlying programmable material during an ashing step when a mask used to etch the programmable material is removed. The capping layer and the programmable material form a capping layer/programmable material layer stack within the antifuse underneath the two barrier metal layers. The capping layer may also be made of a barrier metal and constitute an additional barrier.

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