Metal to metal antifuse

Details Metal to metal antifuse Metal to metal antifuse

1994-10-24

1996-08-06

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, 257751, 257767, H07L 2348, H07L 2946, H07L 2702, H07L 2962

Patent

active

055436560

ABSTRACT:
The antifuse structure of the present invention includes a bottom planarized electrode, an ILD disposed over the bottom electrode, an antifuse cell opening in and through the ILD exposing the bottom electrode, a first barrier metal layer disposed by means of collimated sputter deposition in the antifuse cell opening to form a layer of uniform thickness existing only within the antifuse cell opening in order to protect the antifuse material layer from diffusion from the bottom electrode and to form an effective bottom electrode of reduced area, hence reducing the capacitance of the device, an antifuse material layer disposed in the antifuse cell opening and over the first barrier metal layer, a second barrier metal layer disposed over the antifuse material layer and optionally formed by collimated sputter deposition, and a top electrode disposed over the second barrier metal layer.

REFERENCES:
patent: 4561409 (1987-03-01), Ellsworth et al.
patent: 4748490 (1988-05-01), Hollingsworth
patent: 4796075 (1989-01-01), Whitten
patent: 4822753 (1989-04-01), Pintchowski
patent: 4847732 (1989-07-01), Stopper et al.
patent: 4870302 (1989-09-01), Freeman
patent: 4899205 (1990-02-01), Hamdy et al.
patent: 4914055 (1990-04-01), Gordon et al.
patent: 4933576 (1990-06-01), Tamamura et al.
patent: 4943538 (1990-07-01), Mohsen et al.
patent: 5070384 (1991-12-01), McCollum et al.
patent: 5095362 (1992-03-01), Roesner
patent: 5100827 (1992-03-01), Lytle
patent: 5120679 (1992-06-01), Boardman et al.
patent: 5134457 (1992-07-01), Hamdy et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5171715 (1992-12-01), Husher et al.
patent: 5181096 (1993-01-01), Forouhi
patent: 5194759 (1993-03-01), El-Ayat et al.
patent: 5196724 (1993-03-01), Gordon et al.
patent: 5233217 (1993-08-01), Dixit et al.
patent: 5248632 (1993-09-01), Tung et al.
patent: 5258643 (1993-11-01), Cohen
patent: 5266829 (1993-11-01), Hamdy et al.
patent: 5272101 (1993-12-01), Forouhi et al.
patent: 5272666 (1993-12-01), Tsang et al.
patent: 5284788 (1994-02-01), Spratt et al.
patent: 5290734 (1994-03-01), Boardman et al.
patent: 5300456 (1994-04-01), Tigelaar et al.
patent: 5308795 (1994-05-01), Hawley et al.
patent: 5322812 (1994-06-01), Dixit et al.
patent: 5329153 (1994-07-01), Dixit
patent: 5353246 (1994-10-01), Tsang et al.
patent: 5373169 (1994-12-01), McCollum et al.
patent: 5404029 (1995-04-01), Husher et al.
Chapman et al., "A Lazer Linking Process for Restructurable VLSI", Cleo '82, Apr. 14-16, 1982, Phoenix, Arizona.
Burns, G. P. "Titanium dioxide formed by rapid thermal oxidation" Nov. 4, 1988 Journal of Applied Science, pp. 2095-2097.
Pauleau, "Interconnect Materials for VLSI Circuits", Apr. 1987 Solid State Technology, pp. 155-162.

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