Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-10-06
1996-07-30
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 50, 257751, 257767, H07L 2908
Patent
active
055414419
ABSTRACT:
The antifuse structure of the present invention includes a bottom planarized electrode, an ILD disposed over the bottom electrode, an antifuse cell opening in and through the ILD exposing the bottom electrode, a first barrier metal layer disposed in the antifuse cell opening to protect the antifuse material layer from diffusion from the bottom electrode and to form an effective bottom electrode of reduced area, hence reducing the capacitance of the device, an antifuse material layer disposed in the antifuse cell opening and over the first barrier metal layer, a second barrier metal layer disposed over the antifuse material layer, and a top electrode disposed over the second barrier metal layer.
REFERENCES:
patent: 4561409 (1987-03-01), Ellsworth et al.
patent: 4748490 (1988-05-01), Hollingsworth
patent: 4796075 (1989-01-01), Whitten
patent: 4822753 (1989-04-01), Pintchovski
patent: 4847732 (1989-07-01), Stopper et al.
patent: 4870302 (1989-09-01), Freeman
patent: 4899205 (1990-02-01), Hamdy et al.
patent: 4914055 (1990-04-01), Gordon et al.
patent: 4933576 (1990-06-01), Tamamura et al.
patent: 4943538 (1990-07-01), Mohsen et al.
patent: 5070384 (1991-12-01), McCollum et al.
patent: 5095362 (1992-03-01), Roesner
patent: 5100827 (1992-03-01), Lytle
patent: 5120679 (1992-06-01), Boardman et al.
patent: 5134457 (1992-07-01), Hamdy et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5171715 (1992-12-01), Husher et al.
patent: 5194759 (1993-03-01), El-Ayat et al.
patent: 5196724 (1993-03-01), Gordon et al.
patent: 5233217 (1993-08-01), Dixit et al.
patent: 5266829 (1993-11-01), Hamdy et al.
patent: 5272101 (1993-12-01), Forouhi et al.
patent: 5272666 (1993-12-01), Tsang et al.
patent: 5290734 (1994-03-01), Boardman et al.
patent: 5300456 (1994-04-01), Tigelaar et al.
patent: 5308795 (1994-05-01), Hawley et al.
patent: 5322812 (1994-06-01), Dixit et al.
patent: 5449947 (1995-09-01), Chen et al.
patent: 5475253 (1995-12-01), Look et al.
Chapman, et al., "A Laser Linking Process For Restructurable VLSI", Cleo '82, Apr. 14-16, 1982, Phoenix, Arizona.
Chen Shih-Oh
Fang Leuh
Kruger James B.
Poon Elaine K.
Yeuochung Yen
Actel Corporation
Hardy David B.
Limanek Robert P.
LandOfFree
Metal to metal antifuse does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal to metal antifuse, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal to metal antifuse will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1661240