Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-04-19
2011-04-19
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S741000, C257SE21169, C438S687000
Reexamination Certificate
active
07928573
ABSTRACT:
A metal thin film used in fabricating a damascene interconnection of a semiconductor device which exhibits excellent high temperature fluidity during high pressure annealing, and which can fabricate an interconnection for a semiconductor device which has a low electric resistance and stable high quality is provided. Also provided is an interconnection for a semiconductor device. More specifically, a metal thin film for use as an interconnection of a semiconductor device comprising a Cu alloy containing N at a content of not less than 0.4 at % to not more than 2.0 at %; and an interconnection for a semiconductor device fabricated by forming the metal thin film on an insulator film which is formed on a semiconductor substrate and which has grooves formed therein, and filling the metal thin film in the interior of the grooves by a high pressure annealing process are provided.
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Shimooka et al. Apr. 2, 1996. JP Publication 08-088224, Machine English Translation.
Mizuno Masao
Onishi Takashi
Takeda Mikako
(Kobe Steel, Ltd.)
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Vu Hung
Webb Vernon P
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