Metal surface state evaluation method and semiconductor device p

Details Metal surface state evaluation method and semiconductor device p Metal surface state evaluation method and semiconductor device p

1996-08-13

1998-10-13

Tung, T.

Electrolysis: processes, compositions used therein, and methods

Electrolytic analysis or testing

For properties of solid material

204404, 204434, 2057755, 2057905, 2057915, 438 14, 438 17, 438584, G01N 2726, H01L 2166

Patent

active

058207465

ABSTRACT:
Metal formed on a semiconductor wafer is brought into contact with ions adapted to corrode the metal, and subjected to constant-current electrolysis using a galvanostat. The electrode potential of the metal is measured. There are obtained (i) the relationship between current value and time of pitting corrosion and (ii) the critical current value, based on which the metal is evaluated for surface smoothness, the pitting corrosion resistance of metal surface, resistance to pitting corrosion, the segregation amount and concentration of trace metal contained in the metal, and the grain size or grain boundary length of the metal.

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patent: 4629536 (1986-12-01), Kadin et al.
patent: 5188715 (1993-02-01), Chen et al.
patent: 5448178 (1995-09-01), Chen et al.

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