Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1990-06-29
1993-02-16
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257265, H01L 2354
Patent
active
051875616
ABSTRACT:
The close-packed plane of a single crystal forming an electrode line such as electrodes or lines of a semiconductor device whose active regions are reduced in size, i.e., highly integrated, is arranged parallel to the longitudinal direction of the line; or in the case of a polycrystalline electrode line, the angle formed between the normal line direction of the close-packed plane of its crystal grains and that of the electrode line is arranged to be 80.degree. or less.
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Inokawa et al., "Observation of Initial Stage of Al Epitaxial Growth on Si(111) by Ionized Cluster Beam Opposition", Japanese Journal of Applied Physics, vol. 24, No. 3, Mar. 1985, pp. L173-L174.
Hasunuma et al., "Single Crystal Aluminum Lines eith Excellent Endurance Against Stress Induced Failure", Technical Digest of IEDM, 89, Dec. 3, 1989, pp. 1-3.
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Hasunuma Masahiko
Kaneko Hisashi
Kawanoue Takashi
Kohanawa Yoshiko
Komatsu Shuichi
Clark S. V.
Hille Rolf
Kabushiki Kaisha Toshiba
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