Metal silicide texturizing technique

Details Metal silicide texturizing technique Metal silicide texturizing technique

1991-11-15

1993-01-26

Maples, John S.

Fishing, trapping, and vermin destroying

437228, 437977, 148DIG138, H01L 2144, H01L 21465

Patent

active

051822326

ABSTRACT:
In the present invention, a stable and uniform texturized surface of a conductive structure is developed by annealing, oxidizing and etching a layer of metal silicide that has been deposited over a semiconductive material. Using this process during fabrication of memory cell in a DRAM will increase storage node capacitance by creating texturized capacitor cell plates that will retain their textured surfaces throughout implementation of conventional DRAM fabrication processes.

REFERENCES:
patent: 4663191 (1987-05-01), Choi et al.
patent: 4833099 (1989-05-01), Woo
patent: 5043780 (1991-08-01), Fazan et al.
"Rugged Surface Poly-Si Electrode and Low Temperature Deposited Si.sub.3 N.sub.4 for 64Mbit and beyond STC DRAM Cell" by M. Yoshimaru et al, IEDM 1990, pp. 27.4.1-27.4.4.

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