Metal silicide-silicon heterostructures

Details Metal silicide-silicon heterostructures Metal silicide-silicon heterostructures

1980-06-05

1985-01-08

Edlow, Martin H.

357 4, H01L 2948

Patent

active

044929714

ABSTRACT:
Described are semiconductor heterostructures incorporating a metal layer. Devices based on the heterostructures are described, as are techniques for preparing the heterostructures. Specific embodiments wherein the metal layer is a metal silicide are detailed, and hot electron devices using this structure are analyzed briefly.

REFERENCES:
patent: 4127861 (1978-11-01), Deneuville
patent: 4128670 (1978-12-01), Gaensslen
patent: 4316209 (1982-02-01), Ho et al.
Tu et al., J. Appl. Phys. Suppl. 2, Pt. 1, 1974, Proc. 6th Int. Vacuum Congr. 1974, pp. 669-672.
Tung et al., Thin Solid Films, 93 (1982).

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