Metal-silicide deposition using plasma-enhanced chemical vapor d

Details Metal-silicide deposition using plasma-enhanced chemical vapor d Metal-silicide deposition using plasma-enhanced chemical vapor d

1983-10-31

1985-12-10

Childs, Sadie L.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 99, 4271261, 4272552, 4273762, 4274197, B05D 306

Patent

active

045579431

ABSTRACT:
A method for deposition of thin conductive layers of low resistivity titanium silicide. The method comprises the co-deposition of titanium and silicon by plasma-enhanced chemical vapor deposition at a low temperature. An anneal above the deposition temperature reduces the layer resistivity, making the layer especially suitable for microelectronic applications.

REFERENCES:
patent: 3540920 (1970-11-01), Wakefield
patent: 3658577 (1972-04-01), Wakefield
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4239819 (1980-12-01), Holzl
patent: 4359490 (1982-11-01), Lehrer
Kuppers, "Recent Developments in Plasma Activated Chemical Vapor Deposition", Chem. Vapor Deposition, pp. 159-175, 1979, TS 695 157.

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