Metal silicide channel stoppers for integrated circuits and meth

Details Metal silicide channel stoppers for integrated circuits and meth Metal silicide channel stoppers for integrated circuits and meth

1984-06-29

1986-05-20

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 148DIG19, 148DIG85, 148DIG86, 357 49, H01L 2176, H01L 2194

Patent

active

045891931

ABSTRACT:
Disclosed is the use of metal silicide (e.g. Pt-Si) contacts in boron lightly doped P.sup.- type silicon between two contiguous but not adjacent N.sup.+ type regions instead of employing the usual P.sup.+ implanted or diffused channel stoppers. The invention finds a particularly interesting application in polyimide filled deep trench isolated integrated circuits.
The trench sidewalls are coated with an insulating material which is removed from the trench bottom at the all contact etch step. The Pt-Si is formed at the bottom of the trenches at the same time that the device contacts are made.

REFERENCES:
patent: 3381182 (1968-04-01), Thornton
patent: 3653120 (1972-04-01), Sirrine
patent: 4446476 (1984-05-01), Isaac et al.
patent: 4471525 (1984-09-01), Sasaki
patent: 4473598 (1984-09-01), Ephrath et al.
patent: 4476622 (1984-10-01), Cogan
patent: 4519128 (1985-05-01), Chesebro et al.
patent: 4549927 (1985-10-01), Goth et al.
Abbas, "Recessed Oxide Isolation Process" IBM Technical Disclosure Bulletin vol. 20, No. 1 6/77.
IBM TDB Dec. 1981 pp. 3841-3843.
IBM TDB May 1983 pp. 6611-6614.
IBM TDB Jan. 1983 pp. 4405-4406.

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