Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal
Patent
1997-02-20
2000-10-03
Thomas, Tom
Semiconductor device manufacturing: process
Forming schottky junction
Using refractory group metal
438597, 438651, 438655, 438658, 438660, 438663, 438664, 257384, 257754, 257757, 257768, 257769, H01L 21324, H01L 2133, H01L 21331, H01L 21335
Patent
active
061272493
ABSTRACT:
A method for use in the fabrication of semiconductor devices includes forming a layer of nitridated cobalt on a surface including silicon. A film cap including titanium is formed over the layer of cobalt and a thermal treatment is performed to form cobalt silicide from the layer of cobalt and the silicon. Further, a layer of cobalt or nickel may be formed over a titanium film on a surface including silicon. The titanium film is formed in an atmosphere including at least one of nitrogen and oxygen and a thermal treatment is performed for reversal and silicidation of the titanium film and the layer of cobalt or nickel to form cobalt silicide or cobalt nickel. The methods may be used for silicidation of a contact area, in forming a polycide line, or in use for other metal silicidation applications.
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Micro)n Technology, Inc.
Souw Bernard E.
Thomas Tom
LandOfFree
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