Metal-silica solution for forming films on semiconductor surface

Details Metal-silica solution for forming films on semiconductor surface Metal-silica solution for forming films on semiconductor surface

1978-03-27

1980-02-26

Hayes, Lorenzo B.

Compositions: coating or plastic

Coating or plastic compositions

Silicon containing other than solely as silicon dioxide or...

427 88, 427229, C09K 300

Patent

active

041904583

ABSTRACT:
An improved method for forming a metal-silica coating solution having particular utility in the formation of metal-organo-silicate films on semiconductor surfaces is disclosed. The method comprises the steps of forming a mixture of a first solution having a metal salt and a cross-linking agent dissolved therein and a second solution having an organo-silicate dissolved therein, and aging the mixture a predetermined length of time. This mixture can then be applied to the semiconductor surface where cross-linking takes place such that a viable film is formed. Further heating of the semi-conductor device causes a metal film to be formed which is in turn diffused into the semiconductor device. By the use of the metal-silica solution, an improved method for diffusing metal atoms into silicon for lifetime control is achieved.

REFERENCES:
patent: 3915766 (1975-10-01), Pollack et al.
patent: 3997501 (1976-12-01), McLeod
patent: 4014703 (1977-03-01), Hayati et al.

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