Metal semiconductor optical device

Details Metal semiconductor optical device Metal semiconductor optical device

1997-04-17

1999-10-05

Goodrow, John

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

257485, H01L 3106, H01L 27095

Patent

active

059617411

ABSTRACT:
The present invention provides a metal semiconductor optical device which is capable of thinly uniformly growing a metal film on a semiconductor substrate using a layer functioning as an interface active agent and decreasing the density of interface energy state occurring between the metal thin film and the semiconductor, to thereby enhance the optical absorption efficiency of light beam. The interface single atomic layer is formed by one of the group V elements, e.g., one of antimony(Sb) or arsenic(As). Additionally, the metal thin film has a thickness of approximately 30 .ANG..

REFERENCES:
patent: 5482570 (1996-01-01), Saurer et al.
patent: 5644156 (1997-07-01), Suzuki et al.
patent: 5665175 (1997-09-01), Safir

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