Metal-semiconductor ohmic contact forming process

Details Metal-semiconductor ohmic contact forming process Metal-semiconductor ohmic contact forming process

1992-10-13

1994-04-12

Quach, T. N.

Fishing, trapping, and vermin destroying

437 20, 437187, 437247, 437918, 148DIG1, H01L 21265, H01L 21283, H01L 21324

Patent

active

053025490

ABSTRACT:
A metal semiconductor ohmic contact farming process consists of enrichment of the surface of the semiconductor on which contact is to be formed, by ion implantation of a dopant, followed by deposition of a metal film on the implanted surface and then by thermal annealing at a temperature lower than 500.degree. C. and for a period shorter than 60 minutes.

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Greffken et al, "Contact Metallurgy Development . . . ", IBM J. Research and Development, vol. 31, No. 6, Nov. 1987, pp. 608-616.
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