Metal semiconductor metal photodetectors

Details Metal semiconductor metal photodetectors Metal semiconductor metal photodetectors

1995-01-11

1997-05-20

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257459, 257439, H01L 2714

Patent

active

056314906

ABSTRACT:
MSM-photodetectors are produced using implanted n-type Si and interdigitated electrodes deposited on the implanted surface. The implantation process decreases the carrier lifetime by several orders of magnitude. By implanting silicon with fluorine or oxygen, the bandwidth is increased relatively to unimplanted MSM photodetectors. Exemplary implanted photodetectors exhibited 3-dB bandwidths which were faster by an order of magnitude compared to their unimplanted counterparts. The detectors are thus compatible with multi-gigabit per second operation and monolithic integration with silicon electronics.

REFERENCES:
patent: 4626322 (1986-12-01), Switzer
patent: 4772931 (1988-09-01), Rogers et al.
patent: 4807006 (1989-02-01), Rogers et al.
patent: 5451769 (1995-09-01), Mc Adoo et al.
patent: 5461246 (1995-10-01), Chou

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