Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-10-11
1996-04-30
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257184, 257457, 257459, H01L 2906, H01L 310328, H01L 310336
Patent
active
055127630
ABSTRACT:
A metal-semiconductor-metal (MSM) device comprises interdigitated metal electrodes (2, 3) on a semiconductor substrate (1). When embodied as a photoconductor, a photoconductive region (4) is bounded by layers (5, 6) which form a resonant cavity for incoming radiation to improve the response. In another embodiment, which can be either a photodiode or photoconductor, the electrodes are arranged to extend into the thickness of the photoresponsive layer (4). To reduce sensitivity to polarization,the electrodes may be arranged in sets extending in mutually transverse directions. Groups of the electrodes may be connected so as to be sensitive to polarization but substantially insensitive to the amplitude of incoming radiation.
REFERENCES:
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Hitachi , Ltd.
Mintel William
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