Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1998-01-16
2000-08-22
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257185, 257449, 257450, 257451, 257453, 438 93, 438 94, H01L 31072, H01L 31109, H01L 310328, H01L 310336
Patent
active
06107652&
ABSTRACT:
A metal-semiconductor-metal photodetector including an absorbent layer, a barrier layer of greater forbidden band energy on which there are deposited Schottky electrodes and a transition layer of graded composition, the photodetector including a doping plane situated in the vicinity of the join between the absorbent layer and the transition layer of graded composition.
REFERENCES:
patent: 4939561 (1990-07-01), Yamaka et al.
patent: 5101254 (1992-03-01), Hamana
patent: 5652435 (1997-07-01), Martin et al.
Marso M et al., Electrical Behaviour of the InP/InFaAs based MSM-2DEG diode, Solid-State Electronics, Jan. 1997, vol. 41, No. 1, pp. 25-31.
Hargis M C et al., Temporal and Spectral Characteristics of Back-Illuminated Ingaas Metal-Semicaobnductor-Metal Photodetectors, IEEE Photonics Technology Letters, vol. 8 No. 1, Jan. 1, 1996, pp. 110-112.
Chang-Xin Shi et al., High-Performance Undoped inp/N-Ino.53AO.47AS MSM Photodetectors Grown by LP-Movpe, IEEE Transactions on Electron Devices, vol. 39, No. 5, May 1, 1992, pp. 1028-1031.
Yuang R -H et al., High-Performance Large-Area Ingaas MSM Photodetectors with a Pseudomorphic Ingap Cap Layer, IEEE Photonics Technology Letters, vol. 7, No. 8, Aug. 1, 1995, pp. 914-916.
Scavennec Andre
Temmar Abdelkader
France Telecom
Mintel William
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