Metal/semiconductor junction Schottky diode optical device using

Details Metal/semiconductor junction Schottky diode optical device using Metal/semiconductor junction Schottky diode optical device using

1994-12-09

1996-01-30

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 18, 257 21, 257432, 257453, 257455, H01L 2714, H01L 3100

Patent

active

054882311

ABSTRACT:
A metal/semiconductor junction Schottky diode optical device using a distortion grown layer is described. A plurality of GaAs mirror and AlAs mirror layers are periodically grown on a semi-insulating GaAs substrate. An n+ or p+ semiconductor layer is formed on the GaAs mirror and AlAs mirror layers. A GaAs buffer layer is formed on the semiconductor layer to grow a Schottky metal layer serving as an electrode and a mirror. A multiple quantum well structure having an electro-optical absorption characteristic is positioned between the semiconductor layer and Schottky metal layer, for constructing a diode with the metal layer/multiple quantum well structure. At least a part of the mirror layers and diode are formed with a layer in order to have resonance and non-resonance conditions between the metal layer and mirror layers. The substrate on which the diode is formed has an opposite side formed with an optical non-reflective layer.

REFERENCES:
patent: 4546244 (1985-10-01), Miller
patent: 4751378 (1988-06-01), Hinton et al.
patent: 4754132 (1988-06-01), Hinton et al.
patent: 5053843 (1991-10-01), Choudhury et al.
patent: 5233184 (1993-08-01), Chirovsky et al.

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