Metal-semiconductor field effect transistors (MESFETs)...

Details Metal-semiconductor field effect transistors (MESFETs)... Metal-semiconductor field effect transistors (MESFETs)...

2007-02-15

2010-06-15

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C438S180000

Reexamination Certificate

active

07737476

ABSTRACT:
Metal-semiconductor field-effect transistors (MESFETS) are provided. A MESFET is provided having a source region, a drain region and a gate. The gate is between the source region and the drain region. A p-type conductivity layer is provided beneath the source region, the p-type conductivity layer being self-aligned to the gate. Related methods of fabricating MESFETs are also provided herein.

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Henning et al., Transistors Having Implanted Channels and Implanted P-Type Regions Beneath the Source Region and Methods of Fabricating the Same, U.S. Appl. No. 11/700,268, filed Jan. 31, 2007.

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