Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2008-07-22
2008-07-22
Baumeister, Bradley W (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C438S172000, C257SE29140
Reexamination Certificate
active
07402844
ABSTRACT:
A unit cell of a metal-semiconductor field-effect transistor (MESFET) is provided. The unit cell includes a MESFET having a source, a drain and a gate. The gate is between the source and the drain and on a channel layer of the MESFET. The channel layer has a first thickness on a source side of the channel layer and a second thickness, thicker than the first thickness, on a drain side of the channel layer. Related methods of fabricating MESFETs are also provided herein.
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Baumeister Bradley W
Cree Inc.
Myers Bigel Sibley & Sajovec P.A.
Reames Matthew L
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