Metal semiconductor field effect transistors having improved int

Details Metal semiconductor field effect transistors having improved int Metal semiconductor field effect transistors having improved int

1997-03-27

1998-11-10

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257284, 257270, 257285, 257282, 257392, 257341, H01L 2980

Patent

active

058348026

ABSTRACT:
A comb-shape MESFET assembly has a plurality of unit FETs including first, second and third groups of unit FETs. The pinch-off voltages of the unit FETs are different from group to group by a step difference. The different pinch-off voltages provide a tailored change in the third-order intermodulation distortion in the output of the MESFET assembly. The step differences in the pinch-off voltage is generated by different thicknesses or impurity concentrations of a semiconductor active layer, different gate length of the unit FETs or different types of stress in the gate insulator films.

REFERENCES:
patent: 4459556 (1984-07-01), Nanbu et al.
patent: 4606113 (1986-08-01), Rode
patent: 4635088 (1987-01-01), Eguchi
patent: 4709251 (1987-11-01), Suzuki
patent: 4734751 (1988-03-01), Hwang et al.
patent: 4771195 (1988-09-01), Stein
patent: 4870478 (1989-09-01), Weitzel et al.
patent: 4921814 (1990-05-01), Ishikawa et al.
patent: 5148244 (1992-09-01), Iwasaki
patent: 5252843 (1993-10-01), Suzuki
patent: 5389807 (1995-02-01), Shiga
patent: 5455441 (1995-10-01), Awano
patent: 5602501 (1997-02-01), Shiga
patent: 5694069 (1997-12-01), Kasashima et al.
J. A. Higgins et al, "Analysis and Improvement of Intermodulation Distortion in GaAs Power FET's", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-28, No. 1, Jan. 1980, pp. 9-17.
Peter M. Asbeck et al, "Piezoelectric Effects in GaAs FET's and Their Role in Orientation-Dependent Device Characteristics", IEEE Transactions on Electron Devices, vol. ED-31, No. 10, Oct. 1984, pp. 1377-1380.
R. A. Pucel, "Profile Design for Distortion Reduction in Microwave Field-Effect Transistors", Electron, Lett, 1978, 14, pp. 205-206.

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