Metal-semiconductor field-effect transistor with a partial p-typ

Details Metal-semiconductor field-effect transistor with a partial p-typ Metal-semiconductor field-effect transistor with a partial p-typ

1982-10-04

1986-12-30

Carroll, J.

357 15, 357 20, 357 41, 357 58, 357 86, H01L 2948, H01L 2906, H01L 2980, H01L 2912

Patent

active

046332820

ABSTRACT:
A metal-semiconductor field-effect transistor (MESFET) is provided with a p-type region adjacent the n-type region under the drain contact. Holes injected from this p-type region compensate the negative space charge region at the channel to substrate interface, thus minimizing considerable substrate effects.

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patent: 4377030 (1983-03-01), Pettenpaid et al.
patent: 4471369 (1984-09-01), Anthony et al.

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