Metal semiconductor field effect transistor of source-ground typ

Details Metal semiconductor field effect transistor of source-ground typ Metal semiconductor field effect transistor of source-ground typ

1996-03-20

1998-05-26

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330296, H03C 3193

Patent

active

057572356

ABSTRACT:
There is provided a semiconductor amplifier including a metal-semiconductor field-effect transistor (MESFET) of a source-ground type, having a threshold voltage of a predetermined value within a range of -0.5V to 0V (more preferably, -0.4V to -0.04V), and driving by a single power supply without applying a bias on a gate of the MESFET. According to the above semiconductor amplifier, very high efficiency can be realized while maintaining a sufficiently high output power.

REFERENCES:
patent: 5374899 (1994-12-01), Griffiths et al.
Masami Nagaoka, et al., "Refractory WN.sub.x /W Self-Aligned Gate GaAs Power Metal-Semiconductor Field-Effect Transistor for 1.9-GHz Digital Mobile Communication System Operating with a Single Low-Voltage Supply", Jpn. J. Appl. Phys., vol. 33 (pp. 767-770), Jan. 1994.
Yoshikazu Murakami, et al., "GaAs JFET MMIC Chip Set for L-Band Personal Communication Systems", 1994 Asia Pacific Microwave Conference, WS5-1, (pp. 121-126), Dec. 6, 1994.

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