Metal-semiconductor-field effect transistor (MESFET) with lightl

Details Metal-semiconductor-field effect transistor (MESFET) with lightl Metal-semiconductor-field effect transistor (MESFET) with lightl

1981-11-25

1984-01-10

Clawson, Jr., Joseph E.

357 15, 357 55, 357 91, H01L 2980

Patent

active

044255730

ABSTRACT:
A MESFET is disclosed wherein a gallium arsenide semiconductor material is doped. The doping magnitude differs in the source area, drain area, and in the gate area. An increase of the dielectric strength without an increase of parasitic resistances is provided. In the manufacture of the MESFET, shadowing techniques are employed to vary the doping magnitudes.

REFERENCES:
patent: 4002927 (1977-01-01), Nakamura et al.
patent: 4037169 (1977-07-01), Suzuki
patent: 4173764 (1979-11-01), DeCremoux
patent: 4212022 (1980-07-01), Beneking
patent: 4337473 (1982-06-01), Nishizawa

Affiliated with

Also associated with

Rating

Metal-semiconductor-field effect transistor (MESFET) with lightl does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal-semiconductor-field effect transistor (MESFET) with lightl, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal-semiconductor-field effect transistor (MESFET) with lightl will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-455295