Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2011-05-10
2011-05-10
Stark, Jarrett J (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C438S167000, C257S280000, C257SE29041, C257SE29320
Reexamination Certificate
active
07939865
ABSTRACT:
In one embodiment, a metal-semiconductor field effect transistor (MESFET) comprises a first silicon layer, an insulator layer formed on the first silicon layer, and a second silicon layer formed on the insulator layer. A gate region, a source region, and a drain region are formed in the second silicon layer. A first partial trench is formed in the second silicon layer between at least a portion of the gate region and at least a portion of the source region, wherein the first partial trench stops short of the insulator layer. A second partial trench formed in the second silicon layer between at least a portion of the gate region and at least a portion of the drain region, wherein the second partial trench stops short of the insulator layer. First and second oxide spacers are formed in the first and second partial trenches. The first and second oxide spacers and the source region, gate region, and the drain region are substantially planar.
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Honeywell International , Inc.
Shumaker & Sieffert P.A.
Stark Jarrett J
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