Metal-semiconductor field effect transistor device

Details Metal-semiconductor field effect transistor device Metal-semiconductor field effect transistor device

1989-06-07

1990-11-20

Larkins, William D.

357 22, 357 52, H01L 2948, H01L 2956, H01L 2964

Patent

active

049722379

ABSTRACT:
A metal-semiconductor field effect transistor device has an active layer formed on a first main surface of a semiconductor substrate with a first gate electrode provided on the active layer in Schottky contact therewith and source and drain electrodes provided on opposite sides of the first gate electrode and in ohmic contact with the active layer so as to define corresponding source and drain regions in the active layer with an active region of the active layer extending therebetween. A second gate electrode including first and second portions is provided in Schottky contact on the active layer, respectively on the exposed surface portion segments thereof intermediate the opposite sides of the first gate electrode and the respective drain and source electrodes associated with the first gate electrode. A constant bias voltage is applied to the second gate electrode portions to suppress development of depletion regions in the active layer, corresponding to the second gate electrode portions and resulting from corresponding surface potentials induced by the surface states as well as the Schottky contacts, thereby to minimize or eliminate the resulting depletion regions and the undesired effect thereof on the conductive channel in the active layer.

REFERENCES:
patent: 4048646 (1977-09-01), Ogawa et al.
patent: 4608583 (1986-08-01), Curtice
patent: 4647954 (1987-03-01), Graf et al.
patent: 4763176 (1988-08-01), Ito
Muller & Kamins, Device Electronics for Integrated Circuits, 1986, Sec. Ed., pp. 157-158, Pub., John Wiley & Sons, (textbook).
Sze, Semiconductor Device Physics and Technology, 1985, pp. 181-182, Pub., John Wiley & Sons, (textbook).

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