Metal semiconductor FET having doped A1GaAs layer between channe

Details Metal semiconductor FET having doped A1GaAs layer between channe Metal semiconductor FET having doped A1GaAs layer between channe

1998-05-26

2000-03-14

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257196, H01L 310328, H01L 310336, H01L 31072

Patent

active

060376155

ABSTRACT:
A metal-semiconductor field effect transistor includes an AlGaAs buffer layer made of Al.sub.x Ga.sub.1-x As, wherein 0<x<0.4, and a channel layer made of an n-type doped In.sub.y Ga.sub.1-y As, wherein 0<y<0.4, having a thickness equal to or less than a critical thickness for lattice-matching with GaAs. Further, a doped AlGaAs layer is interposed between the AlGaAs buffer layer and the channel layer. The doped AlGaAs layer is made of Al.sub.x Ga.sub.1-x As, wherein 0<x<0.4, is doped with Si of a concentration of 5*10.sup.17 cm.sup.-3 or more, and has a thickness which is sufficient to provide a barrier against holes caused by a donor depletion region.

REFERENCES:
patent: 5739558 (1998-04-01), Ishida et al.
"Oki Denki Research & Development", vol. 64, No. 1, pp. 51-54, Jan. 1997.
Japanese Patent Application Laid-Open No. 53-126282 (1978).

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