Electric lamp and discharge devices – Secondary emission prevention – Nonemissive material
Patent
1974-02-27
1976-09-14
Segal, Robert
Electric lamp and discharge devices
Secondary emission prevention
Nonemissive material
313366, H01J 3902, H01J 2945
Patent
active
039809153
ABSTRACT:
This disclosure is directed to a photovoltaic detector having specific response to the infrared range, wherein the detector comprises a metal-semiconductor diode having a semi-transparent electrode and disposed on a specially prepared substrate of a narrow band gap semiconductor material or on an epitaxial layer or evaporated film of such material provided on a substrate. In a specific example, the narrow band gap semiconductor material of the substrate is specially prepared (Pb,Sn)Te or an epitaxial layer or evaporated film of (Pb,Sn)Te on a (Pb,Sn)Te substrate. The detected radiation is transmitted through the semi-transparent electrode on top of the photovoltaic detector.
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Calawa et al, "Crystal Growth, Annealing, and Diffusion of Lead-Tin Chalcogenides;" Transactions of the Metallurgical Society of AIME; vol. 242; Mar., 1968; pp. 374-383.
Chapman Richard A.
Johnson Milo R.
Morris Henry B.
Comfort James T.
Hiller William E.
Levine Harold
Segal Robert
Texas Instruments Incorporated
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