Metal semiconductor diode

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357 52, 357 53, 357 54, H01L 2948

Patent

active

040094812

ABSTRACT:
A metal semiconductor diode with a first insulating layer, arranged on a semiconductor body and provided with a first contact window, a second insulating layer, which is thinner than the first insulating layer, has a second contact window which is smaller than the first contact window. The second insulating layer covers the edge of the surface of the semiconductor body which emerges through the first contact window and contact metal is provided in the first and in the second contact window.

REFERENCES:
patent: 3388000 (1968-06-01), Waters
patent: 3405329 (1968-10-01), Loro
patent: 3476984 (1969-11-01), Tibol
patent: 3585496 (1971-06-01), Jager
patent: 3597667 (1971-08-01), Horn
patent: 3599054 (1971-08-01), Lepselter

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