Metal semiconductor device and method for producing the same

Details Metal semiconductor device and method for producing the same Metal semiconductor device and method for producing the same

1991-10-15

1993-12-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437247, 437912, 437192, H01L 21283

Patent

active

052739376

ABSTRACT:
A metal semiconductor device, in which an electrode is formed on a semiconductor substrate to form a Schottky junction therebetween, and the electrode has an oxide film having a first thickness on its upper surface and a non-oxidized portion having a second thickness from the Schottky junction. A method for producing the metal semiconductor device is also disclosed, in which a conductor layer formed on the semiconductor substrate is oxidized in a gas containing oxygen, and a capless annealing of the semiconductor substrate having the oxidized conductor layer thereon is conducted in an atmosphere containing arsenic.

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Uchitomi et al., "Properties of WNX films deposited by reactive sputtering for self-aligned gate GaAs Mesfets," Workshop on Refractory Metals & Silicides for VLSI IV, May 1986.

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