Metal semiconductor contact, semiconductor component,...

Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – Deep level dopant

Reexamination Certificate

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C257S612000

Reexamination Certificate

active

07087981

ABSTRACT:
The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor contact is formed between the metallization and the semiconductor layer. The metallization and/or the semiconductor layer are formed in such a way that only a fraction of the introduced doping concentration is electrically active, and a semiconductor layer doped only with this fraction of the doping concentration only forms a Schottky contact when contact is made with the metallization. Furthermore, the invention relates to a semiconductor component comprising a drain zone, body zones embedded therein and source zones again embedded therein. The semiconductor component has metal-semiconductor contacts in which the contacts made contact only with the source zones but not with the body zones.

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A. Yamamoto et al.: “Annealing Effect on Thermoelectric Properties of Bi implanted Si Thin Film”,20thInternational Conference on Thermoelectrics, 2001, pp. 306-309.

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