Metal profile for increased local magnetic fields in MRAM...

Details Metal profile for increased local magnetic fields in MRAM... Metal profile for increased local magnetic fields in MRAM...

2007-09-04

2007-09-04

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S295000, C365S171000, C365S173000

Reexamination Certificate

active

10940475

ABSTRACT:
A method for fabricating a magnetic random access memory circuit (MRAM) and a MRAM circuit resulting therefrom are provided. The method includes depositing a first conductive layer upon and in contact with a plurality of magnetic cell junctions and selectively removing portions of the first conductive layer arranged above the plurality of magnetic cell junctions. In addition, the method includes depositing a second conductive layer above remaining portions of the first conductive layer and the plurality of magnetic cell junctions. The resulting circuit may include a field-inducing line having thickness and/or width variations relative to underlying magnetic cell junctions.

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