Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2011-03-08
2011-03-08
Deo, Duy-Vu N (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S692000, C438S693000
Reexamination Certificate
active
07902072
ABSTRACT:
A metal-polishing composition includes colloidal silica particles, which has a ratio of minor axis/major axis of 0.2 to 0.8 and a surface at least partially covered with aluminum atoms, comprises in an amount of 50% or more with respect to total abrasives.The metal-polishing composition preferably includes an oxidizing agent, an organic acid or the like. The colloidal silica constituting the colloidal silica particles is preferably formed by hydrolysis of alkoxysilane. The major axis of the colloidal silica particles is preferably in a range of 20 nm to 100 nm.
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Deo Duy-Vu N
FUJIFILM Corporation
Sughrue & Mion, PLLC
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