Metal plate capacitor and method for making the same

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

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357 51, 357 236, 437 47, H01L 2702, H01L 2968, H01L 2194, H01G 406

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050796704

ABSTRACT:
A metal-to-polysilicon capacitor, a floating-gate transistor containing such a capacitor, and a method for making the same is disclosed. The bottom plate of the capacitor is formed over a field oxide structure, and the multilevel dielectic is deposited thereover. The multilevel dielectric is removed from the capacitor area, and an oxide
itride dielectric is deposited over the exposed bottom plate and over the multilevel by way of LPCVD. A first layer of titanium/tungsten is preferably deposited prior to contact etch, and the contacts to moat and unrelated polysilicon are formed. Metallization is sputtered overall, and the metal and titanium/tungsten are cleared to leave the metallization filling the contact holes, and a capacitor having a titanium/tungsten and metal top plate.

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Card et al., "Reversible Floating Memory", J. Appl. Phys., vol. 44, No. 5, May 1973, pp. 2326-30.
Jambotkar et al., "Stacked Gate Device with Reduced `0` Static Threshold Voltage", IBM Tech. Disc. Bull., vol. 22, No. 1, (1979), pp. 160-61.

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