Metal pattern and process for producing the same

Details Metal pattern and process for producing the same Metal pattern and process for producing the same

2005-01-13

2010-02-09

Norton, Nadine G (Department: 1792)

Etching a substrate: processes

Nongaseous phase etching of substrate

Etching inorganic substrate

C101S465000, C438S681000, C438S156000, C438S784000, C438S283000, C438S637000, C438S447000

Reexamination Certificate

active

07658860

ABSTRACT:
A metal pattern of the present invention is a metal pattern (13′) formed on a surface of a substrate by etching, and a monomolecular film containing fluorinated alkyl chains (CF3(CF2)n—, where n represents an integer) is formed on a surface of a metal film composing the metal pattern (13′), and a masking film (18) is formed by penetration of a molecule having a mercapto group (—SH) or a disulfide (—SS—) group into interstices between molecules composing the monomolecular film. The metal pattern is produced by: forming a monomolecular film containing fluorinated alkyl chains (CF3(CF2)n—, where n represents an integer) on a surface of a metal film; forming a masking film by applying a solution in which a molecule having a mercapto group (—SH) or a disulfide (—SS—) group is dissolved over a surface of the monomolecular film so that the molecule having a mercapto group (—SH) or a disulfide (—SS—) group penetrates in interstices between molecules composing the monomolecular film; and etching the metal film by exposing the surface of the metal film to an etching solution so that a portion of the metal film in a region not covered with the masking film is removed.

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