Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects
Patent
1997-03-19
1998-06-02
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
257631, 257632, 257410, 438 38, 438958, H01L 2358, H01L 2978
Patent
active
057604622
ABSTRACT:
A majority carrier device includes a bulk active region and a thin-film passivating layer on the bulk active region. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. In one embodiment, the majority carrier device is a metal, passivating layer, semiconductor, field-effect transistor. The transistor includes an active layer and thin-film passivating layer on the active layer. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. Source and drain contacts are disposed on the active layer or the passivating layer. A gate contact is disposed on the passivating layer between the source contact and the drain contact.
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Barron Andrew R.
Hepp Aloysius F.
Jenkins Phillip P.
MacInnes Andrew N.
Hardy David B.
President and Fellows of Harvard College
Triquint Semiconductor, Inc.
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