Metal oxide varistor with improved electrical properties

Compositions – Electrically conductive or emissive compositions – Metal compound containing

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252519, 252520, H01B 106

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active

040425355

ABSTRACT:
Disclosed is a metal oxide varistor body and a method for manufacturing the same. Conventional manufacturing techniques through sintering are utilized on any metal oxide varistor formulation which includes bismuth oxide. Following sintering, the devices are heat treated at a temperature between 750.degree. C and 1200.degree. C for a time in excess of about 10 hours to cause the bismuth oxide to substantially completely convert to a body centered cubic phase. The presence of the body centered cubic bismuth oxide increases the alpha of the devices and substantially lowers the leakage current.

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patent: 3836483 (1974-09-01), Ichinose et al.
patent: 3872582 (1975-03-01), Matsuoka et al.
patent: 3903226 (1975-09-01), Iga et al.

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