Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2008-07-16
2010-10-12
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257SE49002, C257SE29296, C257SE49003, C257SE21495, C438S104000
Reexamination Certificate
active
07812346
ABSTRACT:
A fabrication method is used in conjunction with a semiconductor device having a metal oxide active layer less than 100 nm thick and the upper major surface and the lower major surface have material in abutting engagement to form underlying interfaces and overlying interfaces. The method of fabrication includes controlling interfacial interactions in the underlying interfaces and the overlying interfaces to adjust the carrier density in the adjacent metal oxide by selecting a metal oxide for the metal oxide active layer and by selecting a specific material for the material in abutting engagement. The method also includes one or both steps of controlling interactions in underlying interfaces by surface treatment of an underlying material forming a component of the underlying interface and controlling interactions in overlying interfaces by surface treatment of the metal oxide film performed prior to deposition of material on the metal oxide layer.
REFERENCES:
patent: 7271458 (2007-09-01), Chui et al.
patent: 2004/0222448 (2004-11-01), Takao
patent: 2007/0231599 (2007-10-01), Nakamura et al.
patent: 2008/0105870 (2008-05-01), Yu et al.
Shieh Chan-Long
Yu Gang
CBRITE Inc.
Goltry Michael W.
Ho Tu-Tu V
Parsons Robert A.
Parsons & Goltry
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